METHOD OF FORMING RESISTANCE CHANGE NON-VOLATILE MEMORY ELEMENT

摘要

A resistance change non-volatile memory element has a first electrode, a second electrode, and a transition metal-oxide film layer interposed between the first electrode and the second electrode. In the initial state of this resistance change non-volatile memory element, forming of the resistance change non-volatile memory element is performed by applying a first forming voltage between the first electrode and the second electrode until first forming occurs which changes the resistance change non-volatile memory element to a first operable state so as to be capable of reversibly changing between a high resistance state and a low resistance state, and applying a second forming voltage between the first electrode and the second electrode until second forming occurs which changes the resistance change non-volatile memory element to a second operable state so as to be capable of changing to a low resistance state wherein the resistance value is lower than the resistance value of the low resistance state of the first operable state after the first forming.