| 摘要 |
<p>The present invention provides a wiring structure enabling the formation of a stable interface between an oxide semiconductor layer and, for example, a metal film configuring a source electrode or a drain electrode in display devices such as organic EL displays and LCDs. The present invention relates to a wiring structure having a thin-film transistor semiconductor layer and a metal wiring film that are positioned on a substrate in order from the substrate side, and having a barrier layer interposed therebetween the semiconductor layer and the metal wiring film, wherein: the semiconductor layer comprises an oxide semiconductor; the barrier layer is configured from a Ti oxide film containing TiOx (x being 1.0-2.0, inclusive); the Ti oxide film is directly connected to the semiconductor layer; and the oxide semiconductor is configured from an oxide containing at least one element selected from a group consisting of In, Ga, Zn, and Sn.</p> |
