SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method and a substrate processing apparatus, which allow the creation of a cavity to be suppressed and enable an opening to be filled readily.

SOLUTION: A method comprises the steps of: forming an opening 206 in part of a dielectric film 204 of a wafer 12 having a metal film 202 made of Si and the dielectric film 204 formed on the metal film 202 to expose the metal film 202 in the opening 206; transporting the wafer 12 into a process chamber 106; selectively forming a first Si film 252 on the metal film 202 of the wafer 12 while supplying at least DCS and Cl2into the process chamber 106; and forming a second Si film 254 on the dielectric film 204 and first Si film 252 of the wafer 12 while supplying at least DCS into the process chamber 106.

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