| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin film transistor array with large opening space, low cost, and high productivity, which can be used for manufacturing an image display device. <P>SOLUTION: A thin film transistor array comprises a plurality of pixels 100 on an insulation substrate. The pixels 100 each include a thin film transistor 1001 for display switching having a semiconductor layer, a source electrode and a drain electrode provided apart from each other in the semiconductor layer, and a gate electrode disposed apart from the semiconductor layer with a gate insulation layer interposed between the gate electrode and the semiconductor layer. The pixels 100 are arranged in matrix adjacent to each other. Four of the pixels 100 which are adjacent to each other among the pixels 100 are used as one unit and a central part of this unit is provided with the thin film transistor 1001 of each pixel 100 in an integrated manner. <P>COPYRIGHT: (C)2012,JPO&INPIT |
