发明名称 DIRECT BONDING METHOD WITH REDUCED OVERLAY MISALIGNMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a new method of directly bonding a first wafer to a second wafer. <P>SOLUTION: The method of the present invention is a method of directly bonding a first wafer (100) having an intrinsic curvature to a second wafer (200) having an intrinsic curvature, in which at least one (100) of the two wafers includes at least one set of microcomponents (110). This method includes at least one step of contacting the two wafers (100, 200) with each other so as to start propagation of a bonding wave between the two wafers. During the contacting step, a predetermined bonding curvature (KB) having a shape of a paraboloid of revolution is given to one of the two wafers depending on the intrinsic curvature before the bonding of the wafer (100), and the other wafer is free to match the predetermined bonding curvature (KB). <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012069917(A) 申请公布日期 2012.04.05
申请号 JP20110158192 申请日期 2011.07.19
申请人 SOYTEC 发明人 MARCEL BROEKAART;GWELTAZ GAUDIN;ARNAULD CASTEX
分类号 H01L21/60;H01L25/065;H01L25/07;H01L25/18 主分类号 H01L21/60
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