| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which enables the suppression of short circuit between upper and lower conductive elements included by MRAM, and to provide a method of manufacturing such device. <P>SOLUTION: The semiconductor device includes: a semiconductor substrate SUB having a primary surface; a magnetic tunnel junction structure MRD located on the primary surface of the semiconductor substrate SUB and including a pin layer MPL, a tunnel insulative layer MTL and a free layer MFL; a lower-side insulative layer III1 in contact with a lower portion of a side face of the magnetic tunnel junction structure MRD; a side-wall insulative layer III2 located above the lower-side insulative layer III1 and put in contact with an upper portion of the side face of the magnetic tunnel junction structure MRD, from which an upper face of the magnetic tunnel junction structure MRD is exposed; and a conductive layer BL put in contact with the upper face of the magnetic tunnel junction structure MRD exposed from the side-wall insulative layer III2. <P>COPYRIGHT: (C)2012,JPO&INPIT |
