| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a transistor and a diode each having a low resistance and a high breakdown voltage. <P>SOLUTION: When a bottom part of a narrow groove 20 of a rectangular parallelepiped is filled with a semiconductor epitaxially grown material, a (100) plane is exposed to a side surface of the narrow groove 20. The epitaxial growth proceeds at a constant rate from individual surfaces in the narrow groove 20, thereby obtaining a void free filling material 22. When the inside of the filling material 22 is completely depleted by setting concentration, width, and the like of the filling material 22 to an optimal value, a portion located between the filling materials 22 of a drain layer 12 is also completely depleted, and electric field intensity in a depletion layer expanded in the drain layer 12 can be made constant. <P>COPYRIGHT: (C)2012,JPO&INPIT |
