| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain an electrically rewritable semiconductor nonvolatile memory device having high reliability by minimizing deterioration in a tunnel insulating film without increasing an occupied area. <P>SOLUTION: In the electrically rewritable semiconductor nonvolatile memory, a tunnel insulating film is provided between a tunnel region in a second conductivity type drain region and a floating gate electrode. The floating gate electrode is formed of a first conductivity type conductor. <P>COPYRIGHT: (C)2012,JPO&INPIT |
