| 摘要 |
A trenched semiconductor power device includes a plurality of trenched gates surrounded by source regions near a top surface of a semiconductor substrate encompassed in body regions. The trenched semiconductor power device further comprises tilt-angle implanted body dopant regions surrounding a lower portion of trench sidewalls for reducing a gate-to-drain coupling charges Qgd between the trenched gates and a drain disposed at a bottom of the semiconductor substrate. The trenched semiconductor power device further includes a source dopant region disposed below a bottom surface of the trenched gates for functioning as a current path between the drain to the source for preventing a resistance increase caused by the body dopant regions surrounding the lower portions of the trench sidewalls.
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