| 摘要 |
1,243,930. Crystal pulling. SIEMENS A.G. 17 March, 1970 [18 March, 1969], No. 12654/ 70. Heading B1S. Monocrystals of compounds which decompose easily at their m.p., e.g. GaAs, are pulled from a melt 6 in a crucible 5 which is disposed in a bath of liquid 7 with the liquid level below the lip of the crucible. The seed crystal support 9 is affixed to and contained within an open-mouthed vessel 8, the lips of which are kept below the level of the liquid 7 whereby the crucible 5 is wholly enclosed. As the crystal 13 grows on the seed 12 the vessel 8 is raised and may also be rotated about its axis. The liquid 7 may be a melt of B 2 O 3 , Ga or CaCl 2 . Vessel 8 may be quartz and crucible 3 of Ir, Rh, Pt or graphite. Induction coil 4 is provided to heat this crucible. The system may be enclosed under vacuum or an atmosphere of A or N, inside tube 1. |
