发明名称 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
摘要 A resistance variable memory cell and of forming the The memory cell includes a first electrode and at one layer of resistance variable in contact with the first electrode. A first, second electrode is in with a first portion of the at least one layer of variable and a second, second is in contact with a portion of the at one layer of resistance variable material.
申请公布号 EP2437324(A1) 申请公布日期 2012.04.04
申请号 EP20110192542 申请日期 2007.08.06
申请人 MICRON TECHNOLOGY, INC. 发明人 LIU, JUN
分类号 H01L45/00;H01L27/24 主分类号 H01L45/00
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