| 摘要 |
A manufacturing apparatus for growing a SiC single crystal on a surface of a seed crystal (5) that is made of a SiC single crystal substrate by supplying a source gas (3) of SiC from a lower side of a vacuum chamber (7) toward the seed crystal (5) includes a pedestal (10), a rod member (13), and a cooling system (11). The pedestal (10) is disposed in the vacuum chamber (7). The pedestal (10) has a first surface on which the seed crystal (5) is disposed and a second surface opposed to the first surface. The rod member (13) holds the pedestal (10). The cooling system (11) includes a temperature control pipe (11a) and a coolant temperature controller (11c). The temperature control pipe (11 a) is disposed on a second surface side of the pedestal (10). The coolant temperature controller (11c) controls a temperature of a coolant that flows to the temperature control pipe (11a). |
