SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to control a interference phenomenon and parasitic capacitance between gate structures by including an air gap between the gate structures. CONSTITUTION: A first insulating layer covering up gate structures(162a,164a,166a) is formed on a substrate(100). A first insulating layer pattern(170a) is formed on the lower side wall of the gate structures and on the substrate. A first recess(172) is formed on the top of the first insulating layer pattern. A second insulating layer pattern(190a) is formed on the sidewall of the gate structures which are not covered by the first insulating layer pattern. A second recess(192) is formed in the lower side of the second insulating layer pattern. An air gap is formed by the first recess and the second recess.