Multi-state memory cell with asymetric charge trapping,申请号EP20110008691-传众专利搜索

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发明名称	Multi-state memory cell with asymetric charge trapping
摘要
申请公布号	EP2416367(A3)	申请公布日期	2012.04.04
申请号	EP20110008691	申请日期	2005.02.15
申请人	MICRON TECHNOLOGY, INC.	发明人	PRALL, KIRK
分类号	H01L29/792;H01L29/788	主分类号	H01L29/792
代理机构		代理人
主权项
地址

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