| 摘要 |
<p>A solid-state image sensing device is provided having a pixel which comprises a photoelectric conversion portion that generates an electrical charge according to an amount of incoming light, a charge holding portion, and a transfer gate electrode that controls a transfer of said electrical charge from said photoelectric conversion portion to said charge holding portion, wherein said pixel comprises a light-shielding member, characterized in that said light-shielding member is disposed so as to cover a first side wall of said transfer gate electrode on said photoelectric conversion portion side while a second side wall of said transfer gate electrode on a different side from said photoelectric conversion portion side is free from said light-shielding member.
</p> |
