| 摘要 |
<p>A chemical mechanical polishing method for a semiconductor device that includes a silicon oxide film and a silicon nitride film on the surface of the semiconductor device, the method comprising: simultaneously polishing the silicon oxide film and the silicon nitride film by using a chemical mechanical polishing aqueous dispersion including (A) colloidal silica having an average particle size calculated from the specific surface area determined by the BET method of 10 to 60 nm, (B) an organic acid having two or more carboxyl groups and one or more hydroxyl groups in one molecule, and (C) a quaternary ammonium compound shown by the following general formula (1),
wherein R 1 to R 4 individually represent hydrocarbon groups, and M - represents an anion, the chemical mechanical polishing aqueous dispersion having a pH of 3 to 5.</p> |
