| 摘要 |
<p>Provided is a substrate for a compound semiconductor solar cell, wherein the substrate maintains excellent elasticity even after high-temperature process is performed for forming a thin film. The substrate for a compound semiconductor solar cell is formed of a steel sheet, and a Cr layer having a coating quantity of 300 to 8000mg/m 2 is formed on a surface of the steel sheet on a side where a solar cell layer is laminated to the steel sheet. One specific embodiment of substrate is a substratewhere a Cr layer having a coating quantity of 500 to 3000mg/m 2 is formed on a surface of the steel sheet on a side where the solar cell layer is laminated to the steel sheet, and a film forming temperature of the solar cell layer is below 550°C. Another specific embodiment of substrate is a substrate where a Cr layer having a coating quantity of 2000 to 8000mg/m 2 is formed on a surface of the steel sheet on a side where the solar cell layer is laminated to the steel sheet, and a film forming temperature of the solar cell layer exceeds 800°C. Still another specific embodiment of substrate is a substrate where a Cr layer having a coating quantity of 2000 to 5000mg/m 2 is formed on a surface of the steel sheet on a side where the solar cell layer is laminated to the steel sheet, and a film forming temperature of the solar cell layer is 550°C or above and 800°C or below. Further, the content of Mn in a steel strip is 2wt% or less, and the content of Fe in the steel strip is 98wt% or less.</p> |
