发明名称 NON-VOLATILE MEMORY APPARATUS, REPAIR CIRCUIT AND D READ OUT METHOD OF CODE ADDRESSABLE MEMORY DATA
摘要 PURPOSE: A nonvolatile memory device, a repair circuit, and a method for reading CAM(Code Addressable Memory) data are provided to shorten loading time of the CAM data by reading a plurality of CAM data with a multi plane method. CONSTITUTION: A memory cell array(120) includes a plurality of planes. A plurality of CAM data are stored in an independent plane. A redundancy cell array(130) replaces a memory cell array. A CAM data reading unit(200) reads the plurality of CAM data from each plane and stores the plurality of CAM data in response to a CAM data read command. A repair circuit outputs a repair control signal by referring to the CAM data stored in the CAM data reading unit.
申请公布号 KR101131569(B1) 申请公布日期 2012.04.04
申请号 KR20100106595 申请日期 2010.10.29
申请人 SK HYNIX INC. 发明人 LEE, SANG KYU
分类号 G11C15/00;G11C16/26;G11C29/44 主分类号 G11C15/00
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