| 摘要 |
A semiconductor device is provided. The semiconductor device comprises: a semiconductor substrate(1001); a gate, sidewalls on both sides of the gate, and source/drain regions on the semiconductor substrate; a lower contact part on the source/drain regions, wherein, the lower contact part neighbors on the outwalls of the sidewalls and the bottom of the lower contact part covers at least a part of the source/drain regions, and the source/drain regions of the same transistor are isolated by an interlayer dielectric layer; an interlayer dielectric layer formed on the gate, sidewalls, source/drain regions and the lower contact part, and an upper contact part(1013) formed in the interlayer dielectric layer and corresponding to the lower contact part. A method for fabricating the semiconductor device is provided, too, and the method is suitable for the fabrication of the contact parts of a semiconductor device. |
