| 摘要 |
<p>PURPOSE: A semiconductor device voltage converter and a manufacturing method thereof are provided to integrate a Schottky diode inside of a lower side power MOSFET(Metal Oxide Semiconductor Field Effect Transistor), thereby reducing power dissipation. CONSTITUTION: An output stage is formed on a single semiconductor die. The output stage comprises an upper side transistor, a lower side transistor, and a single conductive structure. The upper side transistor comprises a laterally diffused metal oxide semiconductor device. The lower side transistor comprises a trench-gate vertical diffusion metal oxide semiconductor device. The single conductive structure forms a part of an upper side transistor gate and a lower side transistor gate. A trench-metal mask is formed along a metal etched part. A contact mask is formed on an oxide(160). A metal structure(184A-184C) is formed by depositing and patterning a conductor such as AlGu.</p> |
