SEMICONDUCTOR APPARATUS AND METHOD MANUFACTURING THEREOF

摘要

PURPOSE: A semiconductor device and a manufacturing method are provided to prevent an electric potential to be generated within an undoped layer by using the undoped layer as an active area. CONSTITUTION: A buffer layer(200) is formed on the front side of a substrate(100). A doped layer(300) doped by an n-type dopant is formed on the buffer layer. A buried insulating layer(400) is formed on the doped layer. An undoped layer(500) is formed on the buried insulating layer. The undoped layer is a GaN layer. An insulating layer(700) is formed on the undoped layer. A first gate(800) is formed on the insulating layer. Source and drain regions are respectively formed on a second region and a third region of the undoped layer. A second gate is formed on one side of the doped layer.