发明名称 |
Method and apparatus for extracting dose and focus from critical dimension data |
摘要 |
A method for monitoring a photolithography system includes defining a model of the photolithography system for modeling top and bottom critical dimension data associated with features formed by the photolithography system as a function of dose and focus. A library of model inversions is generated for different combinations of top and bottom critical dimension values. Each entry in the library specifies a dose value and a focus value associated with a particular combination of top and bottom critical dimension values. A top critical dimension measurement and a bottom critical dimension measurement of a feature formed by the photolithography system using a commanded dose parameter and a commanded focus parameter are received. The library is accessed using the top and bottom critical dimension measurements to generate values for a received dose parameter and the received focus parameter. The received dose and focus parameters are compared to the commanded dose and focus parameters to characterize the photolithography system.
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申请公布号 |
US8149384(B2) |
申请公布日期 |
2012.04.03 |
申请号 |
US20070958086 |
申请日期 |
2007.12.17 |
申请人 |
CHAUHAN SIDDHARTH;LENSING KEVIN R.;STIRTON JAMES BROC;ADVANCED MICRO DEVICES, INC. |
发明人 |
CHAUHAN SIDDHARTH;LENSING KEVIN R.;STIRTON JAMES BROC |
分类号 |
G03B27/52 |
主分类号 |
G03B27/52 |
代理机构 |
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地址 |
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