| 摘要 |
According to one embodiment, a semiconductor memory device includes a memory cell array includes memory cells, lines provided to correspond to the memory cells, a first decoder configured to select a first line as an inspection target from the lines, a second decoder configured to select a second line for generating a reference voltage from the lines, a driver configured to charge the first and second lines, a discharging circuit configured to simultaneously discharge the first and second lines, and a sense amplifier configured to compare a voltage of the first line with a voltage of the second line to detect a defect of the first line while the first line is discharged. |
