发明名称 |
Magnetic random access memory |
摘要 |
An MRAM has: a memory cell including a first magnetoresistance element; and a reference cell including a second magnetoresistance element. The first magnetoresistance element has a first magnetization free layer, a first magnetization fixed layer, a second magnetization free layer and a first nonmagnetic layer sandwiched between the first magnetization fixed layer and the second magnetization free layer. The first magnetization free layer has: first and second magnetization fixed regions; and a magnetization free region. The magnetization free region and the second magnetization free layer are magnetically coupled to each other. Whereas, the second magnetoresistance element has: a third magnetization free layer whose magnetization easy axis is parallel to a second direction; a second magnetization fixed layer whose magnetization direction is fixed in a third direction perpendicular to the second direction; and a second nonmagnetic layer sandwiched between the second magnetization fixed layer and the third magnetization free layer. |
申请公布号 |
US8149615(B2) |
申请公布日期 |
2012.04.03 |
申请号 |
US20090865194 |
申请日期 |
2009.01.09 |
申请人 |
FUKAMI SHUNSUKE;ISHIWATA NOBUYUKI;SUZUKI TETSUHIRO;OHSHIMA NORIKAZU;NAGAHARA KIYOKAZU;NEC CORPORATION |
发明人 |
FUKAMI SHUNSUKE;ISHIWATA NOBUYUKI;SUZUKI TETSUHIRO;OHSHIMA NORIKAZU;NAGAHARA KIYOKAZU |
分类号 |
G11C11/00;G11C11/14;G11C11/15 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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