发明名称 |
Method for manufacturing semiconductor device for preventing occurrence of short circuit between bit line contact plug and storage node contact plug |
摘要 |
A method for manufacturing a semiconductor device includes the steps of forming a plug on a semiconductor substrate, forming an insulation layer over the semiconductor substrate having the plug formed thereon, defining a line type trench through a first etching of a partial thickness of the insulation layer; and defining a contact hole through a second etching of a portion of the insulation layer corresponding to the bottom of the trench so as to expose the plug. |
申请公布号 |
US8148250(B2) |
申请公布日期 |
2012.04.03 |
申请号 |
US20100914318 |
申请日期 |
2010.10.28 |
申请人 |
KIM HYOUNG JOON;KWON HO YUP;PARK JEONG HOON;KIM SUNG HYUN;HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM HYOUNG JOON;KWON HO YUP;PARK JEONG HOON;KIM SUNG HYUN |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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