发明名称 |
Techniques of forming Ohmic contacts on GaN light emitting diodes |
摘要 |
A method of forming ohmic contacts on a light emitting diode that features a surface treatment of a substrate includes exposing a surface of a p-type gallium nitride layer to an acid-containing solution and a buffered oxide etch process. A quantum well is formed in a gallium nitride substrate and a layer of p-type gallium nitride is deposited over the quantum well. The surface of the p-type gallium nitride is exposed to an acid-containing solution and then a buffered oxide etch process is performed to provide an etched surface. A metal stack including a layer of silver disposed between layers of platinum is then deposited. |
申请公布号 |
US8148180(B2) |
申请公布日期 |
2012.04.03 |
申请号 |
US201113184160 |
申请日期 |
2011.07.15 |
申请人 |
FELKER ANDREW J.;VICKERS NICHOLAS ANDREW;SORRA, INC. |
发明人 |
FELKER ANDREW J.;VICKERS NICHOLAS ANDREW |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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