发明名称 |
Methods of manufacturing semiconductor devices |
摘要 |
A plurality of nanowires is grown on a first substrate in a first direction perpendicular to the first substrate. An insulation layer covering the nanowires is formed on the first substrate to define a nanowire block including the nanowires and the insulation layer. The nanowire block is moved so that each of the nanowires is arranged in a second direction parallel to the first substrate. The insulation layer is partially removed to partially expose the nanowires. A gate line covering the exposed nanowires is formed. Impurities are implanted into portions of the nanowires adjacent to the gate line.
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申请公布号 |
US8148212(B2) |
申请公布日期 |
2012.04.03 |
申请号 |
US20080313887 |
申请日期 |
2008.11.25 |
申请人 |
LEE MOON-SOOK;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE MOON-SOOK |
分类号 |
H01L21/44;H01L21/336 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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