发明名称 |
Non-volatile semiconductor storage device |
摘要 |
For data erase from an electrically erasable and programmable non-volatile memory cell, the following operations are performed: an erase operation to apply an erase pulse voltage to a memory cell for data erase, an erase verify operation to verify whether data erase is completed, and a step-up operation to increase the erase pulse voltage by a certain step-up voltage if data erase is not completed. A control unit controls voltages so that at least a first erase pulse voltage initially generated in the erase operation has a longer rise time than that of a second erase pulse voltage generated subsequent to the first erase pulse voltage.
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申请公布号 |
US8149631(B2) |
申请公布日期 |
2012.04.03 |
申请号 |
US20100796964 |
申请日期 |
2010.06.09 |
申请人 |
SHIINO YASUHIRO;KOUNO DAISUKE;IRIEDA SHIGEFUMI;NAKAI KENRI;TAKAHASHI EIETSU;KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHIINO YASUHIRO;KOUNO DAISUKE;IRIEDA SHIGEFUMI;NAKAI KENRI;TAKAHASHI EIETSU |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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