发明名称 |
Magnetic tunnel junction (MTJ) formation with two-step process |
摘要 |
A method of manufacturing a magnetic memory element includes the steps of performing a first etching an oxide layer is etched, using a first photo-resist, the oxide layer formed on top of a contact layer that is formed on top of a magneto tunnel junction (MTJ), depositing a second photo-resist and second etching to leave a portion of the contact layer used to suitably connect the MTJ to circuits outside of the magnetic memory element. |
申请公布号 |
US8148174(B1) |
申请公布日期 |
2012.04.03 |
申请号 |
US201113100048 |
申请日期 |
2011.05.03 |
申请人 |
ABEDIFARD EBRAHIM;KESHTBOD PARVIZ;AVALANCHE TECHNOLOGY, INC. |
发明人 |
ABEDIFARD EBRAHIM;KESHTBOD PARVIZ |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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