WAFER-LEVEL LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A wafer level light-emitting diode package and a manufacturing method thereof are provided to reduce working time and costs which are necessary for manufacturing a light emitting diode module by directly being modularized on a circuit board without using a lead frame or a printed circuit board. CONSTITUTION: A semiconductor stacked structure(30) comprises a first conductivity type top semiconductor layer(25), an active layer(27), and a second conductivity type bottom semiconductor layer(29). A contact hole exposes the first conductivity type top semiconductor by passing through the active layer and the second conductivity type bottom semiconductor layer. A first bump(43a) is electrically connected to the first conductivity type top semiconductor layer which is exposed to a plurality of contact holes. A second bump(43b) is electrically connected to the second conductivity type bottom semiconductor layer. A dummy bump(43c) locates between the first bump and the second bump.