发明名称 |
Method of polishing silicon wafer |
摘要 |
A silicon wafer is polished by applying a polishing solution substantially containing no abrasive grain onto a surface of a polishing pad having a given fixed grain bonded abrasive and then relatively sliding the polishing pad to a silicon wafer to polish the surface of the silicon wafer, wherein a hydroplane layer is formed by the polishing solution supplied between the surface of the silicon wafer and the surface of the polishing pad and a thickness of the hydroplane layer is controlled to change a polishing state of the surface of the silicon wafer. |
申请公布号 |
US8147295(B2) |
申请公布日期 |
2012.04.03 |
申请号 |
US20090472480 |
申请日期 |
2009.05.27 |
申请人 |
KATOH TAKEO;TANIMOTO RYUICHI;OGATA SHINICHI;TAKUSHIMA TAKERU;TAKAISHI KAZUSHIGE;SUMCO CORPORATION |
发明人 |
KATOH TAKEO;TANIMOTO RYUICHI;OGATA SHINICHI;TAKUSHIMA TAKERU;TAKAISHI KAZUSHIGE |
分类号 |
B24B1/00;B24B37/10;B24B37/12;H01L21/304 |
主分类号 |
B24B1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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