SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to reduce manufacturing costs by forming a transparent electrode including a carbon nanotube on an upper side of a light emitting structure. CONSTITUTION: An n-type semiconductor layer(120) is formed on an upper side of a substrate(110). An active layer(130) is formed on the upper side of the n-type semiconductor layer. A p-type semiconductor layer(140) is formed on the upper side of the active layer. A transparent electrode(150) is formed on the upper side of the p-type semiconductor layer. A p-type electrode is formed on the upper side of the transparent electrode.