| 摘要 |
The present invention is related to a semiconductor device with group III-V channel and group IV source-drain and a method for manufacturing the same. Particularly, the energy level density and doping concentration of group III-V materials are increased by the heteroepitaxy of group III-V and group IV materials and the structural design of elements. The method comprises: preparing a substrate; depositing a dummy gate material layer on the substrate and defining a dummy gate from the dummy gate material layer by photolithography; performing doping by self-aligned ion implantation using the dummy gate as a mask and performing activation at high temperature, so as to form source-drain; removing the dummy gate; forming a recess in the substrate between the source-drain pair by etching; forming a channel-containing stacked element in the recess by epitaxy; and forming a gate on the channel-containing stacked element. |
