发明名称 |
Over-sampling read operation for a flash memory device |
摘要 |
A flash memory device and a reading method are provided where memory cells are divided into at least two groups. Memory cells are selected according to a threshold voltage distribution. Data stored in the selected memory cells are detected and the data is latched corresponding to one of the at least two groups according to a first read operation. A second read operation detects and latches data of the memory cells corresponding to another one of the at least two groups. The data is processed through a soft decision algorithm during the second read operation.
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申请公布号 |
US8149618(B2) |
申请公布日期 |
2012.04.03 |
申请号 |
US20080034872 |
申请日期 |
2008.02.21 |
申请人 |
KANG DONG-KU;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG DONG-KU |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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