发明名称 Over-sampling read operation for a flash memory device
摘要 A flash memory device and a reading method are provided where memory cells are divided into at least two groups. Memory cells are selected according to a threshold voltage distribution. Data stored in the selected memory cells are detected and the data is latched corresponding to one of the at least two groups according to a first read operation. A second read operation detects and latches data of the memory cells corresponding to another one of the at least two groups. The data is processed through a soft decision algorithm during the second read operation.
申请公布号 US8149618(B2) 申请公布日期 2012.04.03
申请号 US20080034872 申请日期 2008.02.21
申请人 KANG DONG-KU;SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG DONG-KU
分类号 G11C16/04 主分类号 G11C16/04
代理机构 代理人
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