发明名称 Combinatorial plasma enhanced deposition techniques
摘要 Combinatorial plasma enhanced deposition techniques are described, including designating multiple regions of a substrate, providing a precursor to at least a first region of the multiple regions, and providing a plasma to the first region to deposit a first material on the first region formed using the first precursor, wherein the first material is different from a second material formed on a second region of the substrate.
申请公布号 US8148273(B1) 申请公布日期 2012.04.03
申请号 US201113337728 申请日期 2011.12.27
申请人 SHANKER SUNIL;CHIANG TONY P. 发明人 SHANKER SUNIL;CHIANG TONY P.
分类号 H01L21/31 主分类号 H01L21/31
代理机构 代理人
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