METHOD FOR FABRICATING VERTICAL LIGHT EMITTING DEVICE

摘要

PURPOSE: A method for manufacturing a vertical type light emitting device is provided to improve luminous efficiency by minimizing the damage of a compound semiconductor with an insulating layer limiting each light emitting cell domain in a process where a substrate is separated. CONSTITUTION: A bottom semiconductor layer(120a) is formed on a growth substrate(110). A photo-resist layer is formed on the bottom semiconductor layer. An opening is formed according to each light emitting cell domain by partly etching the photo-resist layer. An insulating layer(140) is formed within the opening. An active layer(120b), a top semiconductor layer(120c), and an intermediation metal layer(120d) are formed on the bottom semiconductor layer. The bottom semiconductor layer is exposed by eliminating the photo-resist layer but not the insulating layer.