| 摘要 |
<p>PURPOSE: A semiconductor memory device and a forming method thereof are provided to improve a coupling ratio between a charge trapping layer and a control gate by preventing poly-silicon from being depleted. CONSTITUTION: A semiconductor substrate(101) includes element isolation regions(B) and active regions(A). Tunnel insulating layers(103) are respectively formed on top portions of the active regions of the semiconductor substrate. Charge trapping layers(105) are respectively formed on top portions of the tunnel insulating layers. Dielectric layers(111) are respectively formed on the upper portions of an entire structure along the surfaces of the charge trapping layers. Buffer layers(113a) are respectively formed on the upper portions of the dielectric layers along the surfaces of the dielectric layers.</p> |
