| 摘要 |
A metal wiring of a semiconductor device and a method of manufacturing the same are provided to prevent the diffusion of a copper layer by forming the copper layer with a multiple structure composed of an amorphous VN film, an amorphous Crv film, and a crystalline Cr film. An insulating layer is formed on a semiconductor substrate(100) while having a wiring region(D). A diffusion barrier(110) comprises a multiple structure composed of V1- xNx(104) film, Cr1-yVy film(108), the Cr film. A metal layer is formed in order to bury a region for the insulating layer on the diffusion barrier. The V1-xNx film and Cr1-yVy film have the respective amorphous phase. The Cr film has the crystalline phase, and the x of the V1-xNx film has the range of 0.1~0.4.
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