发明名称 |
Effective gate length circuit modeling based on concurrent length and mobility analysis |
摘要 |
Disclosed is a computer implemented method and computer program product to determine metal oxide semiconductor (MOS) gate functional limitations. A simulator obtains a plurality of slices of a MOS gate, the slices each comprising at least one parameter, the parameter comprising a slice gate width and a slice gate length. The simulator determines a current for each slice based on a slice gate length of the slice to form a length-based current for each slice. The simulator determines a length-based current for the MOS gate by summing the length-based current for each slice. The simulator calculates a stress profile for each slice. The simulator determines a slice carrier mobility for each slice based on the stress profile of each slice. The simulator determines a carrier mobility-based current for each slice, based on each slice carrier mobility. The simulator determines a carrier mobility for the MOS gate based on the carrier mobility-based current for each slice. The simulator determines an effective length for the MOS gate based on the length-based current. |
申请公布号 |
US8151240(B2) |
申请公布日期 |
2012.04.03 |
申请号 |
US20090416222 |
申请日期 |
2009.04.01 |
申请人 |
AGARWAL KANAK B.;JOSHI VIVEK;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
AGARWAL KANAK B.;JOSHI VIVEK |
分类号 |
G06F9/455;G06F11/22;G06F17/50 |
主分类号 |
G06F9/455 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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