| 发明名称 |
Method of fabricating capacitor |
| 摘要 |
A semiconductor device and a method of fabricating the same include an electrode having a nickel layer with impurities. The electrode having a nickel layer with impurities can be a gate electrode or a capacitor electrode. The electrode having a nickel layer with impurities may include a combination of a pure nickel layer and a nickel layer with impurities. |
| 申请公布号 |
US8148231(B2) |
申请公布日期 |
2012.04.03 |
| 申请号 |
US20080344182 |
申请日期 |
2008.12.24 |
| 申请人 |
DO KWAN-WOO;LEE KEE-JEUNG;KIL DEOK-SIN;KIM YOUNG-DAE;KIM JIN-HYOCK;PARK KYUNG-WOONG;LEE JEONG-YEOP;HYNIX SEMICONDUCTOR INC. |
发明人 |
DO KWAN-WOO;LEE KEE-JEUNG;KIL DEOK-SIN;KIM YOUNG-DAE;KIM JIN-HYOCK;PARK KYUNG-WOONG;LEE JEONG-YEOP |
| 分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
| 代理机构 |
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| 主权项 |
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