COMPLEMENTARY NANOSTRUCTURE PHOTOCONDUCTOR AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A photoconductor having a complementary nano structure and a manufacturing method thereof are provided to easily control the change amount and change direction of a current according to a light signal by attaching the nanostructures of two semiconductors having different doping polarities to a photo-induced charge transfer material. CONSTITUTION: An n-type photoconductor(110) and a p-type photoconductor(120) are formed on a substrate(100). The n-type photoconductor comprises a first nano structure(113) doped to an n-type and drains(111,112) and a first source which are separated. The p-type photoconductor comprises a second nano structure(123) doped to a p-type and drains(121,122) and a second source which are separated. First and second nano structures include a photo-induced charge transfer material(130). The photo-induced charge transfer material has an electron acceptor property according to light irradiation.