发明名称 |
DISPOSITIF MEMRISTOR A RESISTANCE AJUSTABLE GRACE AU DEPLACEMENT D'UNE PAROI MAGNETIQUE PAR TRANSFERT DE SPIN ET UTILISATION DUDIT MEMRISTOR DANS UN RESEAU DE NEURONES |
摘要 |
A device with adjustable resistance includes two magnetic elements separated by an insulating or semi-conductor element. The resistance of the device depends on the position of a magnetic wall in one of the magnetic elements, the magnetic wall separating two areas of said magnetic element each having a separate homogeneous direction of magnetization. The device comprises means for moving the magnetic wall in the magnetic element by applying a spin-polarized electric current, such that the resistance of the device is adjustable in a continuous range of values. The invention is useful in neuromimetic circuits, neural networks and bio-inspired computers. |
申请公布号 |
FR2945147(B1) |
申请公布日期 |
2012.03.30 |
申请号 |
FR20090002122 |
申请日期 |
2009.04.30 |
申请人 |
THALES;CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE - CNRS |
发明人 |
GROLLIER JULIE;CROS VINCENT;NGUYEN VAN DAU FREDERIC |
分类号 |
G11C11/16;H01L27/22;H01L43/08 |
主分类号 |
G11C11/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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