发明名称 DISPOSITIF MEMRISTOR A RESISTANCE AJUSTABLE GRACE AU DEPLACEMENT D'UNE PAROI MAGNETIQUE PAR TRANSFERT DE SPIN ET UTILISATION DUDIT MEMRISTOR DANS UN RESEAU DE NEURONES
摘要 A device with adjustable resistance includes two magnetic elements separated by an insulating or semi-conductor element. The resistance of the device depends on the position of a magnetic wall in one of the magnetic elements, the magnetic wall separating two areas of said magnetic element each having a separate homogeneous direction of magnetization. The device comprises means for moving the magnetic wall in the magnetic element by applying a spin-polarized electric current, such that the resistance of the device is adjustable in a continuous range of values. The invention is useful in neuromimetic circuits, neural networks and bio-inspired computers.
申请公布号 FR2945147(B1) 申请公布日期 2012.03.30
申请号 FR20090002122 申请日期 2009.04.30
申请人 THALES;CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE - CNRS 发明人 GROLLIER JULIE;CROS VINCENT;NGUYEN VAN DAU FREDERIC
分类号 G11C11/16;H01L27/22;H01L43/08 主分类号 G11C11/16
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