Fabricating boron-doped silicon wire for semiconductor structures that are useful in electronic, photonic/photovoltaic devices, by depositing catalyst pads on substrate, and performing catalytic growth of wire in absence of boron precursor

摘要

The process comprises depositing catalyst pads (1) on a substrate (7) by optical lithography or nano-imprint lithography, performing catalytic growth of wire in absence of boron precursor, and performing catalytic growth of wire in presence of boron precursor. The catalytic growth steps are carried out at a temperature of = 700[deg] C. The catalytic growth steps are carried out in presence of: silane as a silicon precursor at a pressure of 0.1-5 Pa; chlorine; hydrogen chloride at a pressure of 0.2-25 Pa; and diborane or trimethylborane as a boron precursor. The process comprises depositing catalyst pads (1) on a substrate (7) by optical lithography or nano-imprint lithography, performing catalytic growth of wire in absence of boron precursor, and performing catalytic growth of wire in presence of boron precursor. The catalytic growth steps are carried out at a temperature of = 700[deg] C. The catalytic growth steps are carried out in presence of: silane as a silicon precursor at a pressure of 0.1-5 Pa; chlorine; hydrogen chloride at a pressure of 0.2-25 Pa; and diborane or trimethylborane as a boron precursor at a pressure of 10 ->5>times greater than the pressure of silicon precursor. The catalyst pads are laterally isolated into a silicon dioxide layer. The boron precursor is added when a height of undoped silicon wire reaches 20% of a height of silicon wire. An independent claim is included for a boron-doped silicon wire or a set of boron-doped silicon wire.