发明名称 INDUCTIVE PLASMA SOURCE
摘要 <p>Methods and apparatus to provide efficient and scalable RF inductive plasma processing are disclosed. In some aspects, the coupling between an inductive RF energy applicator and plasma and/or the spatial definition of power transfer from the applicator are greatly enhanced. The disclosed methods and apparatus thereby achieve high electrical efficiency, reduce parasitic capacitive coupling, and/or enhance processing uniformity. Various embodiments comprise a plasma processing apparatus having a processing chamber bounded by walls, a substrate holder disposed in the processing chamber, and an inductive RF energy applicator external to a wall of the chamber. The inductive RF energy applicator comprises one or more radiofrequency inductive coupling elements (ICEs). Each inductive coupling element has a magnetic concentrator in close proximity to a thin dielectric window on the applicator wall.</p>
申请公布号 KR20120031241(A) 申请公布日期 2012.03.30
申请号 KR20127004409 申请日期 2010.08.20
申请人 MATTSON TECHNOLOGY, INC. 发明人 GODYAK VALERY A.;CRAPUCHETTES CHARLES;NAGORNY VLADIMIR
分类号 H05H1/34;H01L21/3065;H05H1/46 主分类号 H05H1/34
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