| 摘要 |
A method of manufacturing a semiconductor device including forming a plurality of gate structures spaced apart from each other on a substrate; forming a first insulation layer covering the gate structures, the first insulation layer including a void between the gate structures; removing an upper portion of the first insulation layer to form a first insulation layer pattern on sidewalls of lower portions of the gate structures and on the substrate between the gate structures, the first insulation layer pattern including a first recess thereon; forming a conductive layer on upper portions of the gate structures exposed by the first insulation layer pattern; reacting the conductive layer with the gate structures; and forming a second insulation layer on the upper portions of the gate structures, the second insulation layer including a second recess therebeneath in fluid communication with the first recess. |
