| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress variation in voltage applied to a substrate periphery to control the top-face potential of a focus ring placed at a substrate susceptor of a plasma processing apparatus to a desired value, by enabling adjustment of the dielectric constant of a dielectric ring provided at the focus ring without exchanging the dielectric ring. <P>SOLUTION: A plasma processing apparatus comprises: a susceptor 114 which has a substrate mount part for mounting a substrate W thereon, and to which high-frequency power is applied; a focus ring 210 which is integrally composed of an outer ring 214 disposed so as to surround the periphery of the substrate mounted on the substrate mount part and having a top face higher than the substrate, and an inner ring 212 extending to the inside of the outer ring and located under the periphery of the substrate and having a top face lower than the substrate; a dielectric ring 220 which is interposed between the focus ring and the susceptor; and a dielectric constant varying mechanism 250 which varies the dielectric constant of the dielectric ring. <P>COPYRIGHT: (C)2012,JPO&INPIT |
