发明名称 |
GROUP III NITRIDE-BASED GREEN-LASER DIODES AND WAVEGUIDE STRUCTURES THEREOF |
摘要 |
Group III nitride-based laser diodes comprise an n-side cladding layer formed of n-doped (Al,In)GaN, an n-side waveguide layer formed of n-doped (Al)InGaN, an active region, a p-side waveguide layer formed of p-doped (Al)InGaN, and a p-side cladding layer formed of p-doped (Al,In)GaN. Optical mode is shifted away from high acceptor concentrations in p-type layers through manipulation of indium concentration and thickness of the n-side waveguide layer. Dopant and compositional profiles of the p-side cladding layer and the p-side waveguide layer are tailored to reduce optical loss and increased wall plug efficiency. |
申请公布号 |
WO2012039997(A2) |
申请公布日期 |
2012.03.29 |
申请号 |
WO2011US51343 |
申请日期 |
2011.09.13 |
申请人 |
CORNING INCORPORATED;BHAT, RAJARAM;SIZOV, DMITRY;ZAH, CHUNG-EN |
发明人 |
BHAT, RAJARAM;SIZOV, DMITRY;ZAH, CHUNG-EN |
分类号 |
H01S5/343 |
主分类号 |
H01S5/343 |
代理机构 |
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代理人 |
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地址 |
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