发明名称 SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCTION THEREOF
摘要 <p>This semiconductor device (100) comprises multiple source wiring lines (16), a thin film transistor (50A), and a diode element (10A) which electrically connects two of the multiple source wiring lines (16) to each other. A connection area (26) in which the source wiring lines (16) are connected to the diode element (10A) involves a first electrode (3), a second electrode (6a), a third electrode (9a) and a fourth electrode (9b). One or some of the source wiring lines (16) are source electrodes for the thin film transistor (50A), and the second electrode (6a) and the source wiring lines (16) are so formed as to be separated from each other.</p>
申请公布号 WO2012039317(A1) 申请公布日期 2012.03.29
申请号 WO2011JP70805 申请日期 2011.09.13
申请人 SHARP KABUSHIKI KAISHA;KATSUI HIROMITSU;YANEDA TAKESHI;ISOMURA YOSHIYUKI 发明人 KATSUI HIROMITSU;YANEDA TAKESHI;ISOMURA YOSHIYUKI
分类号 H01L29/786;G02F1/1368;G09F9/30;H01L21/336;H01L21/822;H01L27/04 主分类号 H01L29/786
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