发明名称 Semiconductor Memory Device
摘要 A semiconductor memory device includes a first sense amplifier which senses data on a first line pair and generates a first output signal; and a test unit which senses the data on a first line pair and transfers a second output signal to a second line in response to a test mode signal.
申请公布号 US2012075937(A1) 申请公布日期 2012.03.29
申请号 US201113313828 申请日期 2011.12.07
申请人 HWANG SUN YOUNG;HYNIX SEMICONDUCTOR INC. 发明人 HWANG SUN YOUNG
分类号 G11C7/06 主分类号 G11C7/06
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