MANUFACTURING METHOD OF EPITAXIAL DIODE ARRAY WITH DUAL SHALLOW TRENCH ISOLATIONS

摘要

A manufacturing method of an epitaxial diode array with dual shallow trench isolations is provided. The method includes: forming a heavily doped first conductivity type region (2) and a highly doped second conductivity type region in a substrate (1); growing an epitaxial layer; forming a first trench to expose the first conductivity type region (2) by an etching process, so that the second conductivity type region is divided into a plurality of wordlines; oxidizing and filling the first trench, and performing a planarization technology whereafter a first trench isolation structure is achieved; forming a second trench which is perpendicular to the first trench and exposes the wordlines by an etching process; oxidizing and filling the second trench, and performing a planarization technology whereafter a second trench isolation structure is achieved; the epitaxial layer is divided into a plurality of isolation regions by the first trench and the second trench; performing an ion implantation process so that independent diode array cells are formed in the isolation regions.